Motore di ricerca datesheet componenti elettronici |
|
FDC645 Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
|
FDC645 Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDC645N Rev B(W) Typical Characteristics 0 5 10 15 20 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 3.0V 2.5V 4.5V 2.0V VGS = 10V 3.5V 0.8 1 1.2 1.4 0 5 10 15 20 25 ID, DRAIN CURRENT (A) VGS = 3.0V 3.5V 6.0V 4.0V 4.5V 5.0V 10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 5.5A VGS = 4.5V 0.01 0.02 0.03 0.04 0.05 0.06 0.07 22.533.544.5 5 VGS, GATE TO SOURCE VOLTAGE (V) ID = 3.75 A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 5 10 15 20 25 30 11.522.533.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 125oC VDS = 5V 25oC 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25oC -55oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Codice articolo simile - FDC645 |
|
Descrizione simile - FDC645 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |