FDC645 datasheet(3/8 Pages) FAIRCHILD

Il numero della parte	FDC645

Spiegazioni elettronici	N-Channel PowerTrench MOSFET

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

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FDC645N Rev B(W)

Typical Characteristics

0

5

10

15

20

0

0.5

1

1.5

2

VDS, DRAIN-SOURCE VOLTAGE (V)

3.0V

2.5V

4.5V

2.0V

VGS = 10V

3.5V

0.8

1

1.2

1.4

0

5

10

15

20

25

ID, DRAIN CURRENT (A)

VGS = 3.0V

3.5V

6.0V

4.0V

4.5V

5.0V

10V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

-50

-25

0

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (

oC)

ID = 5.5A

VGS = 4.5V

0.01

0.02

0.03

0.04

0.05

0.06

0.07

22.533.544.5

5

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 3.75 A

TA = 125

oC

TA = 25

oC

Figure 3. On-Resistance Variation

withTemperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

5

10

15

20

25

30

11.522.533.5

VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55

oC

125oC

VDS = 5V

25oC

0.0001

0.001

0.01

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1

1.2

1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

TA = 125

oC

25oC

-55oC

VGS = 0V

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

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