June 1999

FDC638P

P-Channel 2.5V Specified PowerTrench

General Description

Features

Symbol Parameter

Ratings

Units

V

DSS

Drain-Source Voltage

-20

V

V

GSS

Gate-Source Voltage - Continuous

±8

V

I

D

Drain Current - Continuous

(Note 1a)

-4.5

A

- Pulsed

-20

P

D

Maximum Power Dissipation

(Note 1a)

1.6

W

(Note 1b)

0.8

T

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

78

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

30

°C/W

FDC638P Rev.D

This

P -Channel

2.5V specified

MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process that

has been especially tailored to minimize the on-state resistance

and

yet

maintain

low

gate

charge

for

superior

switching

performance.

These devices are well suited for battery power applications: load

switching and power management, battery charging circuits, and

DC/DC conversion.

-4.5 A, -20 V. R

@ V

R

@ V

Low gate charge (13nC typical).

High performance trench technology for extremely low R

SuperSOT

TM

-6 package: small footprint (72% smaller than standard

SO-8); low profile (1mm thick).

SOIC-16

SOT-23

SuperSOT

SO-8

SOT-223

SuperSOT

D

D

D

S

D

G

SuperSOT

-6

TM

.638

pin 1

3

5

6

4

1

2

3

©1999 Fairchild Semiconductor