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FDC602 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDC602
Spiegazioni elettronici  P-Channel 2.5V Specified PowerTrench MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC602 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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November 1999
ADVANCE INFORMATION
1999 Fairchild Semiconductor Corporation
FDC602P Rev A
FDC602P
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
•= Battery management
•= Load switch
•= Battery protection
Features
•= –5.5 A, –12 V
RDS(ON) = 0.033
Ω @ V
GS = –4.5 V
RDS(ON) = 0.052
Ω @ V
GS = –2.5 V
•= Fast switching speed.
•= High performance trench technology for extremely
low RDS(ON) .
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–12
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
– Continuous
(Note 1a)
-5.5
A
– Pulsed
-30
Maximum Power Dissipation
(Note 1a)
1.6
W
PD
(Note 1b)
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.602
FDC602P
7’’
8mm
3000 units


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