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FDC5612 Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor |
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FDC5612 Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDC5612 Rev. C Typical Characteristics (continued) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. 0.00001 0.0001 0.001 0.01 0.1 1 10 100 300 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R = 156°C/W T - T = P * R (t) A J P(pk) t1 t 2 θJA θJA θJA θJA 0 1 2 3 4 5 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 156 oC/W TA = 25 oC 0 100 200 300 400 500 600 700 800 900 0 10 20304050 60 V DS, D RAIN T O S O UR CE VOL T AG E (V ) CISS CRSS COSS f = 1MHz VGS = 0 V 0 2 4 6 8 10 0 2 4 6 8 10 12 14 Q g, GATE CHARG E (n C) ID = 4.3A V DS = 10 V 20 V 30 V Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DR AIN-SO UR CE VO LTAG E (V) DC 1s 100m s 10m s 1m s 100 µs V GS= 10V SING L E PUL S E R θJA= 156 o C/W T A= 25 o C R DS(ON) LIM IT |
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