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FDC3612 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDC3612 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page February 2002 2002 Fairchild Semiconductor Corporation FDC3612 Rev B3 (W) FDC3612 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter Features • 2.6 A, 100 V RDS(ON) = 125 m Ω @ VGS = 10 V RDS(ON) = 135 m Ω @ VGS = 6 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (14nC typ) • High power and current handling capability • Fast switching speed D D D S D G SuperSOT -6 TM 6 5 4 1 2 3 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) 2.6 A – Pulsed 20 Maximum Power Dissipation (Note 1a) 1.6 W PD (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .362 FDC3612 7’’ 8mm 3000 units |
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