STP23NM50N datasheet(1/21 Pages) STMICROELECTRONICS

Il numero della parte	STP23NM50N

Spiegazioni elettronici	N-channel 500 V, 0.162 廓, 17 A TO-220, TO-220FP, TO-247, D짼PAK MDmesh??II Power MOSFET

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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1 / 21 page

May 2011

Doc ID 16913 Rev 4

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STB23NM50N, STF23NM50N

STP23NM50N, STW23NM50N

N-channel 500 V, 0.162

Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK

MDmesh™ II Power MOSFET

Features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

Switching applications

Description

These devices are made using the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Figure 1.

Internal schematic diagram

Order codes

VDSS

(@Tjmax)

RDS(on)

max.

ID

STB23NM50N

550 V

< 0.19

Ω

17 A

STF23NM50N

STP23NM50N

STW23NM50N

1

2

3

1

2

3

TO-220FP

TO-220

1

2

3

TO-247

1

3

D²PAK

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB23NM50N

23NM50N

D²PAK

Tape and reel

STF23NM50N

TO-220FP

Tube

STP23NM50N

TO-220

STW23NM50N

TO-247

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