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AM2307PE Scheda tecnica(PDF) 1 Page - Analog Power |
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AM2307PE Scheda tecnica(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM2307PE P-Channel 20-V (D-S) MOSFET VDS (V) ID(A) -5.2 -4.4 -3.9 -3.2 Symbol Limit Units VDS -20 VGS ±10 TA=25°C -5.2 TA=70°C -4.3 IDM -20 IS -1.9 A TA=25°C 1.3 TA=70°C 0.8 TJ, Tstg -55 to 150 °C Symbol Maximum Units 100 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Maximum Junction-to-Ambient a Continuous Drain Current a Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W 44 @ VGS = -2.5V 56 @ VGS = -1.8V rDS(on) (mΩ) 31 @ VGS = -4.5V PRODUCT SUMMARY -20 83 @ VGS = -1.5V ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits c Preliminary 1 Publication Order Number: DS_AM2307PE_1B |
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