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TS420-700T Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte TS420-700T
Spiegazioni elettronici  Sensitive gate 4 A SCRs
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Characteristics
TS420
2/11
Doc ID 5203 Rev 4
1
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
On-state rms current (180° conduction angle)
Tl = 115 °C
4
A
IT(AV)
Average on-state current (180° conduction angle)
Tl = 115 °C
2.5
A
ITSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25 °C
33
A
tp = 10 ms
30
I²tI²t Value for fusing
tp = 10 ms
Tj = 25 °C
4.5
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
F = 60 Hz
Tj = 125 °C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
1.2
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
0.2
W
Tstg
Storage junction temperature range
- 40 to + 150
°C
Tj
Operating junction temperature range
- 40 to + 125
VRGM
Maximum peak reverse gate voltage
5
V
Table 3.
Device timings
Symbol
Parameter
Test conditions
Value
Unit
tGT
Gate controlled turn on time
ITM = 10 A, VD = VDRM(max), IGT = 10 mA,
dIG/dt = 0.2 A/µs, RG = 1 kΩ, Tj = 25 °C
0.5 (Typ.)
µs
tQ
Circuit controlled turn off time
VD = 67% VDRM(max), Tj = 125 °C, ITM = 8 A,
VR = 10 V, dIT/dt = 10 A/µs,
dVD/dt = 2 V/µs, RG = 1 kΩ
60 (Typ.)


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