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BC548A Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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BC548A Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 2 page NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 030V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, I E = 0 30 V V(BR)CES Collector-Base Breakdown Voltage IC = 10 µA, I E = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, I C = 0 5.0 V ICBO Collector Cutoff Current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = +150 °C 15 5.0 nA µA ON CHARACTERISTICS hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA 548 548A 548B 548C 110 110 200 420 800 220 450 800 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA 0.25 0.60 V V VBE(on) Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA VCE = 5.0 V, IC = 10 mA 0.58 0.70 0.77 V V SMALL SIGNAL CHARACTERISTICS hfe Small-Signal Current Gain IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz 125 900 NF Noise Figure VCE = 5.0 V, IC = 200 µA, RS = 2.0 k Ω, f = 1.0 kHz, BW = 200 Hz 10 dB |
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