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BC307A Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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BC307A Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC307 : BC308/309 -50 -30 V V VCEO Collector-Emitter Voltage : BC307 : BC308/309 -45 -25 V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 1. Collector 2. Base 3. Emitter TO-92 1 |
Codice articolo simile - BC307A |
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