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FZT851QTA Scheda tecnica(PDF) 4 Page - Diodes Incorporated |
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FZT851QTA Scheda tecnica(HTML) 4 Page - Diodes Incorporated |
4 / 7 page FZT851 Document Number DS33174 Rev. 3 - 2 4 of 7 www.diodes.com January 2013 © Diodes Incorporated FZT851 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 150 220 − V IC = 100µA Collector-Emitter Breakdown Voltage BVCER 150 220 − V IC = 1µA, RB ≤ 1kΩ Collector-Emitter Breakdown Voltage (Note 10) BVCEO 60 85 − V IC = 10mA Emitter-Base Breakdown Voltage BVEBO 7 8.1 − V IE = 100µA Collector Cut-off Current ICBO − − <1 − 50 1 nA µA VCB = 120V VCB = 120V, TA = +100°C Collector Cut-off Current ICER − − <1 − 50 1 nA µA VCB = 120V, RB ≤ 1kΩ VCB = 120V, TA = +100°C Emitter Cut-off Current IEBO − <1 10 nA VEB = 6V DC Current Gain (Note 10) hFE 100 200 − − IC = 10mA, VCE = 1V 100 200 300 IC = 2A, VCE = 1V 75 120 − IC = 5A, VCE = 1V 25 50 − IC = 10A, VCE = 1V Collector-Emitter Saturation Voltage (Note 10) VCE(sat) − − 50 mV IC = 100mA, IB = 5mA − − 100 IC = 1A, IB = 50mA − − 170 IC = 2A, IB = 50mA − − 375 IC = 6A, IB = 300mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) − − 1200 mV IC = 6A, IB = 300mA Base-Emitter Turn-On Voltage (Note 10) VBE(on) − − 1150 mV IC = 6A, VCE = 1V Current Gain-Bandwidth Product (Note 10) fT − 130 − MHz IC = 100mA, VCE = 10V, f = 50MHz Output Capacitance (Note 10) Cobo − 45 − pF VCB = 10V, f = 1MHz Switching Times ton − 45 − ns IC = 1A, VCC = 10V, IB1 = -IB2 = 100mA toff − 1100 − Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% |
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