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PZT3906 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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PZT3906 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2N3906 PZT3906 MMBT3906 Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C C B E TO-92 B C C SOT-223 E C B E SOT-23 Mark: 2A ©1997 Fairchild Semiconductor Corporation |
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