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STP210N75F6 Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STP210N75F6 Scheda tecnica(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STP210N75F6 4/13 Doc ID 018507 Rev 1 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown voltage ID = 250 µA, VGS = 0 75 V IDSS Zero gate voltage Drain current (VGS = 0) VDS = max rating 1 µA VDS = max rating,TC=125 °C 100 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 60 A 3.0 3.7 m Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 11800 pF Coss Output capacitance - 1060 - pF Crss Reverse transfer capacitance 394 pF Qg Total gate charge VDD = 37.5 V, ID = 120 A, VGS = 10 V (see Figure 14) 171 nC Qgs Gate-source charge - 50 - nC Qgd Gate-drain charge 36 nC |
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