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OP249 Scheda tecnica(PDF) 2 Page - Analog Devices |
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OP249 Scheda tecnica(HTML) 2 Page - Analog Devices |
2 / 17 page –2– REV. C OP249–SPECIFICATIONS ELECTRICAL CHARACTERISTICS OP249A OP249E OP249F Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Units Offset Voltage VOS 0.2 0.5 0.1 0.3 0.2 0.7 mV Long Term Offset Voltage VOS (Note 1) 0.8 0.6 1.0 mV Offset Stability 1.5 1.5 1.5 µV/Month Input Bias Current IB VCM = 0 V, TJ = +25°C 3075 2050 3075pA Input Offset Current IOS VCM = 0 V, TJ = +25°C 6 25 4 15 6 25 pA Input Voltage Range IVR (Note 2) +12.5 +12.5 +12.5 V ±11 ±11 ±11 V –12.5 –12.5 –12.5 V Common-Mode Rejection CMR VCM = ± 11 V 8090 8695 80 90 dB Power-Supply Rejection Ratio PSRR VS = ± 4.5 V to ± 18 V 12 31.6 9 31.6 12 50 µV/V Large-Signal Voltage Gain AVO VO = ± 10 V, RL = 2 kΩ 1000 1400 1000 1400 500 1200 V/mV Output Voltage Swing VO RL = 2 kΩ +12.5 +12.5 +12.5 V ±12.0 ±12.0 ±12.0 V –12.5 –12.5 –12.5 V Short-Circuit Current Limit ISC Output Shorted to +36 +36 +36 mA Ground ±20 ±50 ±20 ±50 ±20 ±50 mA –33 –33 –33 mA Supply Current ISY No Load, VO = 0 V 5.6 7.0 5.6 7.0 5.6 7.0 mA Slew Rate SR RL = 2 kΩ, CL = 50 pF 18 22 18 22 18 22 V/ µs Gain-Bandwidth Product GBW (Note 4) 3.5 4.7 3.5 4.7 3.5 4.7 MHz Settling Time tS 10 V Step 0.01% 3 0.9 1.2 0.9 1.2 0.9 1.2 µs Phase Margin θ 0 0 dB Gain 55 55 55 Degrees Differential Input Impedance ZIN 10 12 61012 61012 6 Ω pF Open-Loop Output Resistance RO 35 35 35 Ω Voltage Noise en p-p 0.1 Hz to 10 Hz 2 2 2 µV p-p Voltage Noise Density en fO = 10 Hz 75 75 75 nV/ √Hz fO = 100 Hz 26 26 26 nV/ √Hz fO = 1 kHz 17 17 17 nV/ √Hz fO = 10 kHz 16 16 16 nV/ √Hz Current Noise Density in fO = 1 kHz 0.003 0.003 0.003 pA/ √Hz Voltage Supply Range VS ±4.5 ±15 ±18 ±4.5 ±15 ±18 ±4.5 ±15 ±18 V NOTES 1Long-term offset voltage is guaranteed by a 1000 HR life test performed on three independent wafer lots at +125 °C with LTPD of three. 2Guaranteed by CMR test. 3Settling time is sample tested. 4Guaranteed by design. Specifications subject to change without notice. ELECTRICAL CHARACTERISTICS OP249G Parameter Symbol Conditions Min Typ Max Units Offset Voltage VOS 0.4 0.2 mV Input Bias Current IB VCM = 0 V, TJ = +25°C40 75 pA Input Offset Current IOS VCM = 0 V, TJ = +25°C10 25 pA Input Voltage Range IVR (Note 1) +12.5 V ±11 V –12.0 V Common-Mode Rejection CMR VCM = ± 11 V 76 90 dB Power Supply Rejection Ratio PSRR VS = ± 4.5 V to ± 18 V 12 50 µV/V Large Signal Voltage Gain AVO VO = ± 10 V; RL = 2 kΩ 500 1100 V/mV Output Voltage Swing VO RL = 2 kΩ +12.5 V ±12.0 V –12.5 V Short-Circuit Current Limit ISC Output Shorted to Ground +36 mA ±20 ±50 mA –33 mA Supply Current ISY No Load; VO = 0 V 5.6 7.0 mA Slew Rate SR RL = 2 kΩ, CL = 50 pF 18 22 V/ µs Gain Bandwidth Product GBW (Note 2) 4.7 MHz Settling Time tS 10 V Step 0.01% 0.9 1.2 µs Phase Margin θ 0 0 dB Gain 55 Degree Differential Input Impedance ZIN 10 12 6 Ω pF (@ VS = 15 V, TA = +25 C, unless otherwise noted) (@ VS = 15 V, TA = +25 C, unless otherwise noted) |
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