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OP249 Scheda tecnica(PDF) 2 Page - Analog Devices

Il numero della parte OP249
Spiegazioni elettronici  Dual, Precision JFET High Speed Operational Amplifier
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Produttore elettronici  AD [Analog Devices]
Homepage  http://www.analog.com
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OP249 Scheda tecnica(HTML) 2 Page - Analog Devices

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–2–
REV. C
OP249–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
OP249A
OP249E
OP249F
Parameter
Symbol Conditions
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Units
Offset Voltage
VOS
0.2
0.5
0.1
0.3
0.2
0.7
mV
Long Term Offset Voltage
VOS
(Note 1)
0.8
0.6
1.0
mV
Offset Stability
1.5
1.5
1.5
µV/Month
Input Bias Current
IB
VCM = 0 V, TJ = +25°C
3075
2050
3075pA
Input Offset Current
IOS
VCM = 0 V, TJ = +25°C
6
25
4
15
6
25
pA
Input Voltage Range
IVR
(Note 2)
+12.5
+12.5
+12.5
V
±11
±11
±11
V
–12.5
–12.5
–12.5
V
Common-Mode Rejection
CMR
VCM = ± 11 V
8090
8695
80
90
dB
Power-Supply Rejection Ratio
PSRR
VS = ± 4.5 V to ± 18 V
12
31.6
9
31.6
12
50
µV/V
Large-Signal Voltage Gain
AVO
VO = ± 10 V, RL = 2 kΩ 1000 1400
1000 1400
500
1200
V/mV
Output Voltage Swing
VO
RL = 2 kΩ
+12.5
+12.5
+12.5
V
±12.0
±12.0
±12.0
V
–12.5
–12.5
–12.5
V
Short-Circuit Current Limit
ISC
Output Shorted to
+36
+36
+36
mA
Ground
±20
±50
±20
±50
±20
±50
mA
–33
–33
–33
mA
Supply Current
ISY
No Load, VO = 0 V
5.6
7.0
5.6
7.0
5.6
7.0
mA
Slew Rate
SR
RL = 2 kΩ, CL = 50 pF
18
22
18
22
18
22
V/
µs
Gain-Bandwidth Product
GBW
(Note 4)
3.5
4.7
3.5
4.7
3.5
4.7
MHz
Settling Time
tS
10 V Step 0.01%
3
0.9
1.2
0.9
1.2
0.9
1.2
µs
Phase Margin
θ
0
0 dB Gain
55
55
55
Degrees
Differential Input Impedance
ZIN
10
12 61012 61012 6
Ω pF
Open-Loop Output Resistance RO
35
35
35
Voltage Noise
en p-p
0.1 Hz to 10 Hz
2
2
2
µV p-p
Voltage Noise Density
en
fO = 10 Hz
75
75
75
nV/
√Hz
fO = 100 Hz
26
26
26
nV/
√Hz
fO = 1 kHz
17
17
17
nV/
√Hz
fO = 10 kHz
16
16
16
nV/
√Hz
Current Noise Density
in
fO = 1 kHz
0.003
0.003
0.003
pA/
√Hz
Voltage Supply Range
VS
±4.5 ±15
±18
±4.5 ±15
±18
±4.5 ±15
±18
V
NOTES
1Long-term offset voltage is guaranteed by a 1000 HR life test performed on three independent wafer lots at +125
°C with LTPD of three.
2Guaranteed by CMR test.
3Settling time is sample tested.
4Guaranteed by design.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
OP249G
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Offset Voltage
VOS
0.4
0.2
mV
Input Bias Current
IB
VCM = 0 V, TJ = +25°C40
75
pA
Input Offset Current
IOS
VCM = 0 V, TJ = +25°C10
25
pA
Input Voltage Range
IVR
(Note 1)
+12.5
V
±11
V
–12.0
V
Common-Mode Rejection
CMR
VCM = ± 11 V
76
90
dB
Power Supply Rejection Ratio
PSRR
VS = ± 4.5 V to ± 18 V
12
50
µV/V
Large Signal Voltage Gain
AVO
VO = ± 10 V; RL = 2 kΩ
500
1100
V/mV
Output Voltage Swing
VO
RL = 2 kΩ
+12.5
V
±12.0
V
–12.5
V
Short-Circuit Current Limit
ISC
Output Shorted to Ground
+36
mA
±20
±50
mA
–33
mA
Supply Current
ISY
No Load; VO = 0 V
5.6
7.0
mA
Slew Rate
SR
RL = 2 kΩ, CL = 50 pF
18
22
V/
µs
Gain Bandwidth Product
GBW
(Note 2)
4.7
MHz
Settling Time
tS
10 V Step 0.01%
0.9
1.2
µs
Phase Margin
θ
0
0 dB Gain
55
Degree
Differential Input Impedance
ZIN
10
12 6
Ω pF
(@ VS =
15 V, TA = +25 C, unless otherwise noted)
(@ VS =
15 V, TA = +25 C, unless otherwise noted)


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