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OP196 Scheda tecnica(PDF) 4 Page - Analog Devices |
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OP196 Scheda tecnica(HTML) 4 Page - Analog Devices |
4 / 16 page OP196/OP296/OP496 REV. B –4– ELECTRICAL SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage VOS OP196G, OP296G, OP496G 35 300 µV 0 °C ≤ T A ≤ +125°C 650 µV OP296H, OP496H 800 µV 0 °C ≤ T A ≤ +125°C 1.2 mV Input Bias Current IB –40 °C ≤ T A ≤ +125°C ±10 ±50 nA Input Offset Current IOS ±1 ±8nA –40 °C ≤ T A ≤ +125°C ±15 nA Input Voltage Range VCM 0 +12 V Common-Mode Rejection Ratio CMRR 0 V ≤ V CM ≤ +12 V, –40 °C ≤ T A ≤ +125°C65 dB Large Signal Voltage Gain AVO RL = 100 kΩ 300 1000 V/mV Long-Term Offset Voltage VOS G Grade, Note 1 550 µV H Grade, Note 1 1 mV Offset Voltage Drift ∆V OS/∆T G Grade, Note 2 1.5 µV/°C H Grade, Note 2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 100 µA 11.85 V IL = 1 mA 11.30 V Output Voltage Swing Low VOL IL = –1 mA 70 mV IL = –1 mA 550 mV Output Current IOUT ±4mA POWER SUPPLY Supply Current per Amplifier ISY VOUT = 6 V, RL = ∞ 60 µA –40 °C ≤ T A ≤ +125°C80 µA Supply Voltage Range VS +3 +12 V DYNAMIC PERFORMANCE Slew Rate SR RL = 100 k Ω 0.3 V/ µs Gain Bandwidth Product GBP 450 kHz Phase Margin øm 50 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density en f = 1 kHz 26 nV/ √Hz Current Noise Density in f = 1 kHz 0.19 pA/ √Hz NOTES 1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40 °C to +25°C delta and the +25°C to +125°C delta. Specifications subject to change without notice. (@ VS = +12.0 V, VCM = +6 V, TA = +25 C unless otherwise noted) |
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