1N4001G THRU 1N4007G

GENERAL PURPOSE SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts

Forward Current - 1.0 Ampere

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.012 ounce, 0.33 grams

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

molded plastic technique

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

5 lbs. (2.3kg) tension

FEATURES

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Dimensions in inches and (millimeters)

50

35

50

100

70

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1000

1N

4001G

V

V

V

SYMBOLS

UNITS

A

A

V

1.0

30.0

1.0

Operating junction and storage temperature range

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

Typical junction capacitance (NOTE 1)

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted

5.0

50.0

100

8.0

-65 to +175

pF

C

µA

Typical thermal resistance (NOTE 2)

K/W

1N

4002G

1N

4004G

1N

4003G

1N

4005G

1N

4007G

1N

4006G

DO-41

0.107 (2.7)

0.080 (2.0)

DIA.

0.034 (0.86)

0.028 (0.71)

DIA.

1.0 (25.4)

MIN.

0.205 (5.2)

0.160(4.1)

1.0 (25.4)

MIN.

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Characteristic

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Glass Passivated Die Construction