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STP2301_V1 Scheda tecnica(PDF) 2 Page - List of Unclassifed Manufacturers |
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STP2301_V1 Scheda tecnica(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 7 page  STP2301 P Channel Enhancement Mode MOSFET -2.8A 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP2301 2007. V1 2 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID -2.8 -1.5 A Pulsed Drain Current IDM -10 A Continuous Source Current (Diode Conduction) IS -1.6 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 ℃/W |
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Descrizione simile - STP2301_V1 |
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