ST2300SRG

N Channel Enhancement Mode MOSFET

6.0A

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2300SRG 2005. V1

1

DESCRIPTION

The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is

produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.These devices

are particularly suited for low voltage application such as cellular phone and notebook

computer power management and other batter powered circuits, and low in-line power loss

are needed in a very small outline surface mount package.

PIN CONFIGURATION

SOT-23

1.Gate

2.Source

3.Drain

PART MARKING

SOT-23

Y: Year Code

A: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

ST2300SRG

SOT-23

42YA

※ Process Code : A ~ Z ; a ~ z

※ ST2300SRG ; S : SOT23 R : Tape Reel ; G : Pb – Free

FEATURE

(Typ.)

Super high density cell design for

Exceptional on-resistance and

Maximum DC current capability

SOT-23 package design

3

1

2

D

G

S

3

1

2

42YA