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BC177 Scheda tecnica(PDF) 2 Page - Comset Semiconductor |
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BC177 Scheda tecnica(HTML) 2 Page - Comset Semiconductor |
2 / 3 page PNP BC177 – BC178 – BC179 18/10/2012 COMSET SEMICONDUCTORS 2 | 3 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol Ratings Test Condition(s) Min Typ Max Unit VCE(SAT) Collector-Emitter saturation Voltage IC =-10 mA IB =-0.5 mA BC177 - -0.075 -0.25 BC178 BC179 IC =-100 mA IB =-5 mA BC177 - -0.2 - BC178 BC179 VBE(SAT) Base-Emitter Saturation Voltage IC =-10 mA IB =-0.5 mA BC177 - -0.72 -0.8 V BC178 BC179 IC =-100 mA IB =-5 mA BC177 - -0.86 - BC178 BC179 VBE Base-Emitter Voltage IC =-2 mA VCE =-5 V BC177 -0.6 -0.65 -0.75 V BC178 BC179 hFE DC Current Gain (*) IC= -2 mA VCE= 5 V BC177A 125 - 260 - BC178A BC179A BC177B 240 - 500 BC178B BC179B fT Transition frequency IC =-10 mA VCE =-5 V f = 100 MHz BC177 - 200 - MHz BC178 BC179 F Noise figure IC = -200 µA VCE =-5 V f = 1kHz Rg=2kΩ B = 200Hz BC177 - - 10 db BC178 - - 10 BC179 - - 4 CC Collector capacitance IE = 0 VCB =-10 V f = 1MHz BC177 - 5 - pF BC178 BC179 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to mounting base 500 °C/W RthJ-c Thermal Resistance, Junction to ambient in free air 200 °C/W |
Codice articolo simile - BC177 |
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Descrizione simile - BC177 |
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