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FSB50250AT Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FSB50250AT Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
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2 / 10 page  2 www.fairchildsemi.com FSB50250AT Rev. A Absolute Maximum Ratings Inverter Part (Each FRFET Unless Otherwise Specified) Control Part (Each HVIC Unless Otherwise Specified) Bootstrap Diode Part (Each Bootstrap diode Unless Otherwise Specified) Thermal Resistance Total System Note: 1. For the measurement point of case temperature TC, please refer to Figure 4. 2. Marking “ * “ is calculation value or design factor. Symbol Parameter Conditions Rating Units VPN DC Link Input Voltage, Drain-source Voltage of each FRFET 500 V *ID25 Each FRFET Drain Current, Continuous TC = 25°C 1.2 A *ID80 Each FRFET Drain Current, Continuous TC = 80°C 0.9 A *IDP Each FRFET Drain Current, Peak TC = 25°C, PW < 100ms 3.1 A *IDRMS Each FRFET Drain Current, Rms TC = 80°C, FPWM < 20KHz 0.6 Arms *PD Maximum Power Dissipation TC = 25°C, For Each FRFET 13.4 W Symbol Parameter Conditions Rating Units VCC Control Supply Voltage Applied between VCC and COM 20 V VBS High-side Bias Voltage Applied between VB and VS 20 V VIN Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V Symbol Parameter Conditions Rating Units VRRMB Maixmum Repetitive Reverse Voltage 500 V * IFB Forward Current TC = 25°C 0.5 A * IFPB Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1.5 A Symbol Parameter Conditions Rating Units RqJC Junction to Case Thermal Resistance Each FRFET under inverter operat- ing condition (Note 1) 9.3 °C/W Symbol Parameter Conditions Rating Units TJ Operating Junction Temperature -40 ~ 150 °C TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60Hz, Sinusoidal, 1 minute, Con- nection pins to heatsink 1500 Vrms |
Codice articolo simile - FSB50250AT |
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Descrizione simile - FSB50250AT |
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