©2011 Fairchild Semiconductor Corporation

FDT86113LZ Rev.C

www.fairchildsemi.com

1

March 2011

FDT86113LZ

100 V, 3.3 A, 100 m

:

Features

„ High power and current handling capability in a widely used

surface mount package

„ HBM ESD protection level > 3 KV typical (Note 4)

„ 100% UIL tested

„ RoHS Compliant

General Description

This N-Channel logic Level MOSFETs are produced using

that has been special tailored to minimize the on-state resistance

and yet maintain superior switching performance.

G-S zener

has been added to enhance ESD voltage level.

Application

„ DC - DC Switch

G

D

S

D

SOT-223

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

100

V

Gate to Source Voltage

±20

V

Drain Current -Continuous

3.3

A

-Pulsed

12

Single Pulse Avalanche Energy

(Note 3)

9

mJ

Power Dissipation

(Note 1a)

2.2

W

Power Dissipation

(Note 1b)

1.0

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

12

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

55

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

86113LZ

FDT86113LZ

SOT-223

13 ’’

12 mm

2500 units