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FDT86113LZ Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDT86113LZ Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2011 Fairchild Semiconductor Corporation FDT86113LZ Rev.C www.fairchildsemi.com 1 March 2011 FDT86113LZ N-Channel PowerTrench® MOSFET 100 V, 3.3 A, 100 m : Features Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package HBM ESD protection level > 3 KV typical (Note 4) 100% UIL tested RoHS Compliant General Description This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. Application DC - DC Switch G D S D SOT-223 MOSFET Maximum Ratings T C = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous 3.3 A -Pulsed 12 EAS Single Pulse Avalanche Energy (Note 3) 9 mJ PD Power Dissipation TA = 25 °C (Note 1a) 2.2 W Power Dissipation TA = 25 °C (Note 1b) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RTJC Thermal Resistance, Junction to Case 12 °C/W RTJA Thermal Resistance, Junction to Ambient (Note 1a) 55 Device Marking Device Package Reel Size Tape Width Quantity 86113LZ FDT86113LZ SOT-223 13 ’’ 12 mm 2500 units |
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