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FDG6301N Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor

Il numero della parte FDG6301N
Spiegazioni elettronici  Dual N-Channel, Digital FET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG6301N Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor

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Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics ( continued)
0
0.1
0.2
0.3
0.4
0.5
0.6
0
1
2
3
4
5
6
Q , GATE CHARGE (nC)
g
I = 0.22A
D
V
= 5V
DS
10V
0.4
0.8
2
5
10
25
40
0.01
0.03
0.1
0.3
1
V
, DRAIN-SOURCE VOLTAGE (V)
RDS(ON)
LIMIT
DC
DS
10s
100ms
10ms
V
= 4.5V
SINGLE PULSE
R
= 415 °C/W
T = 25°C
θJA
GS
A
1s
0.1
0.3
1
3
10
25
2
3
5
8
15
30
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Ciss
f = 1 MHz
V
= 0 V
GS
Coss
Crss
0.0001
0.001
0.01
0.1
1
10
200
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R
=415°C/W
T = 25°C
θJA
A
0.0001
0.001
0.01
0.1
1
10
100
200
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
T - T = P * R
(t)
A
J
P(pk)
t1
t 2
θJA
R
(t) = r(t) * R
R
=415
°C/W
θJA
θJA
θJA
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
FDG6301N_F085 Rev. A
www.fairchildsemi.com
4


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