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FDD6637 Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDD6637 Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDD6637_F085 Rev. C www.fairchildsemi.com 3 Electrical Characteristics T C = 25 oC unless otherwise noted Switching Characteristics Drain-Source Diode Characteristics Notes: Symbol Parameter Test Conditions Min Typ Max Units td(on) Turn-On Delay Time VDD = -20V, ID = -1A, VGS = -10V, RGEN = 6Ω -18 32 ns tr Rise Time - 10 20 ns td(off) Turn-Off Delay Time - 62 100 ns tf Fall Time - 36 58 ns VSD Source to Drain Diode Voltage ISD = -14A - -0.8 -1.2 V trr Reverse Recovery Time IF = -14A, dISD/dt = 100A/μs -28 37 ns Qrr Reverse Recovery Charge - 15 20 nC This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 1: Starting TJ = 25oC, L = 1mH, IAS = -11A, VGS=10V, VDD=-35V during the inductor charging time and 0V during the time in avalanche |
Codice articolo simile - FDD6637_10 |
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Descrizione simile - FDD6637_10 |
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