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FDD4243 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDD4243
Spiegazioni elettronici  P-Channel PowerTrench짰 MOSFET -40V, -14A, 64m廓
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2010 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C
Electrical Characteristics T
J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250μA, VGS = 0V
-40
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = -250μA, referenced to 25°C
-29
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -32V, VGS = 0V
-1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250μA
-1
-1.8
-3
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250μA, referenced to 25°C
5.8
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = -10V, ID = -12.7A
10.1
12.3
m
Ω
VGS = -4.5V, ID = -10.4A
14.5
18.0
VGS = -10V, ID = -12.7A,
TJ = 125°C
15.3
18.7
gFS
Forward Transconductance
VDS = -5V, ID = -12.7A
38
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -20V, VGS = 0V,
f = 1MHz
2085
2775
pF
Coss
Output Capacitance
360
480
pF
Crss
Reverse Transfer Capacitance
210
310
pF
Rg
Gate Resistance
f = 1MHz
4.6
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = -20V, ID = -12.7A,
VGS = -10V, RGEN = 6Ω
10
19
ns
tr
Rise Time
7
13
ns
td(off)
Turn-Off Delay Time
38
60
ns
tf
Fall Time
15
27
ns
Qg
Total Gate Charge
VGS = 0V to -10V
VDD = -20V,
ID = -12.7A
36
50
nC
Qg
Total Gate Charge
VGS = 0V to -5V
19
27
nC
Qgs
Gate to Source Charge
7
nC
Qgd
Gate to Drain “Miller” Charge
8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = -12.7A
(Note 2)
-0.8
-1.2
V
trr
Reverse Recovery Time
IF = -12.7A, di/dt = 100A/μs
29
44
ns
Qrr
Reverse Recovery Charge
26
40
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300
μs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V.
52°C/W when mounted on a
1 in2 pad of 2 oz copper
100°C/W when mounted
on a minimum pad.
a)
b)


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