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ST3406SRG Scheda tecnica(PDF) 1 Page - Stanson Technology |
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ST3406SRG Scheda tecnica(HTML) 1 Page - Stanson Technology |
1 / 6 page ST3406SRG N Channel Enhancement Mode MOSFET 5.4A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406SRG 2006. V1 DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 1.Gate 2.Source 3.Drain PART MARKING SOT-23 Y: Year Code A: Week Code FEATURE 30V/5.4A, RDS(ON) = 26m (Typ.) @VGS = 10V 30V/4.6A, RDS(ON) = 38m @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3 1 2 D G S 3 1 2 A6YA |
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