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SIZ916DT Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SIZ916DT Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 14 page www.vishay.com 2 Document Number: 62721 S12-2049-Rev. A, 27-Aug-12 Vishay Siliconix SiZ916DT New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA Ch-1 30 V VGS = 0 V, ID = 250 µA Ch-2 30 VDS Temperature Coefficient V DS/TJ ID = 250 µA Ch-1 17 mV/°C ID = 250 µA Ch-2 8.8 VGS(th) Temperature Coefficient V GS(th)/TJ ID = 250 µA Ch-1 - 5.0 ID = 250 µA Ch-2 - 5.9 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Ch-1 1.2 2.4 V VDS = VGS, ID = 250 µA Ch-2 1 2.4 Gate Source Leakage IGSS VDS = 0 V, VGS = ± 20 V, - 16 V Ch-1 ± 100 nA Ch-2 ± 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-1 1 µA VDS = 30 V, VGS = 0 V Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 5 On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V Ch-1 20 A VDS 5 V, VGS = 10 V Ch-2 25 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 19 A Ch-1 0.0053 0.0064 VGS = 10 V, ID = 20 A Ch-2 0.00105 0.00130 VGS = 4.5 V, ID = 15 A Ch-1 0.0080 0.0100 VGS = 4.5 V, ID = 20 A Ch-2 0.0014 0.00175 Forward Transconductanceb gfs VDS = 10 V, ID = 19 A Ch-1 55 S VDS = 10 V, ID = 20 A Ch-2 116 Dynamica Input Capacitance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 1208 pF Ch-2 8082 Output Capacitance Coss Ch-1 375 Ch-2 1961 Reverse Transfer Capacitance Crss Ch-1 30 Ch-2 227 Cr/Ci Ratio Ch-1 0.025 0.050 Ch-2 0.028 0.056 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 20 A Ch-1 17 26 nC VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 106 160 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 20 A Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-1 7.2 11 Ch-2 45 68 Gate-Source Charge Qgs Ch-1 3.6 Ch-2 23.2 Gate-Drain Charge Qgd Ch-1 0.94 Ch-2 5 Output Charge Qoss VDS = 15 V, VGS = 0 V Ch-1 10 Ch-2 57.5 Gate Resistance Rg f = 1 MHz Ch-1 0.5 2.5 5.0 Ch-2 0.2 1 2 |
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