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SIZ904DT Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte SIZ904DT
Spiegazioni elettronici  Dual N-Channel 30 V (D-S) MOSFETs
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Vishay Siliconix
SiZ904DT
New Product
Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFETs
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Notebook System Power
POL
Low Current DC/DC
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (
www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for Channel-1 and 61 °C/W for Channel-2.
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
ID (A) Qg (Typ.)
Channel-1
30
0.024 at VGS = 10 V
12a
3.8 nC
0.030 at VGS = 4.5 V
12a
Channel-2
30
0.0135 at VGS = 10 V
16a
7.3 nC
0.017 at VGS = 4.5 V
16a
S2
G2
G1
D1
D1
6
7
8
3
2
1
D1
S1/D2
5 mm
6 mm
D1
4
5
Pin 1
Ordering Information: SiZ904DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
PowerPAIR® 6 x 5
Pin 9
D1
S2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
G1
S1/D2
G2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
VDS
30
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
12a
16a
A
TC = 70 °C
12a
16a
TA = 25 °C
9.5b, c
14.5b, c
TA = 70 °C
7.6b, c
11.6b, c
Pulsed Drain Current (t = 300 µs)
IDM
30
40
Source Drain Current Diode Current
TC = 25 °C
IS
12a
16a
TA = 25 °C
3.2b, c
4b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
10
15
Single Pulse Avalanche Energy
EAS
511
mJ
Maximum Power Dissipation
TC = 25 °C
PD
20
33
W
TC = 70 °C
12.9
21
TA = 25 °C
3.8b, c
4.8b, c
TA = 70 °C
2.4b, c
3.1b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Channel-2
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, f
t
 10 s
RthJA
25
33
20
26
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
4.7
6.2
3
3.8


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