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SIZ904DT Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SIZ904DT Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 14 page Vishay Siliconix SiZ904DT New Product Document Number: 63482 S11-2380-Rev. B, 28-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual N-Channel 30 V (D-S) MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • POL • Low Current DC/DC Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile ( www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 68 °C/W for Channel-1 and 61 °C/W for Channel-2. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Channel-1 30 0.024 at VGS = 10 V 12a 3.8 nC 0.030 at VGS = 4.5 V 12a Channel-2 30 0.0135 at VGS = 10 V 16a 7.3 nC 0.017 at VGS = 4.5 V 16a S2 G2 G1 D1 D1 6 7 8 3 2 1 D1 S1/D2 5 mm 6 mm D1 4 5 Pin 1 Ordering Information: SiZ904DT-T1-GE3 (Lead (Pb)-free and Halogen-free) PowerPAIR® 6 x 5 Pin 9 D1 S2 N-Channel 2 MOSFET N-Channel 1 MOSFET G1 S1/D2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 12a 16a A TC = 70 °C 12a 16a TA = 25 °C 9.5b, c 14.5b, c TA = 70 °C 7.6b, c 11.6b, c Pulsed Drain Current (t = 300 µs) IDM 30 40 Source Drain Current Diode Current TC = 25 °C IS 12a 16a TA = 25 °C 3.2b, c 4b, c Single Pulse Avalanche Current L = 0.1 mH IAS 10 15 Single Pulse Avalanche Energy EAS 511 mJ Maximum Power Dissipation TC = 25 °C PD 20 33 W TC = 70 °C 12.9 21 TA = 25 °C 3.8b, c 4.8b, c TA = 70 °C 2.4b, c 3.1b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Channel-2 Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t 10 s RthJA 25 33 20 26 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4.7 6.2 3 3.8 |
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