SI1489EDH datasheet(2/12 Pages) VISHAY

Il numero della parte	SI1489EDH

Spiegazioni elettronici	P-Channel 8 V (D-S) MOSFET

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Document Number: 67491

S11-0610-Rev. A, 04-Apr-11

Vishay Siliconix

Si1489EDH

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 8

V

VDS Temperature Coefficient

ΔVDS/TJ

ID = - 250 µA

- 2

mV/°C

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

2.2

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.35

- 0.7

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 5 V

± 5

µA

Zero Gate Voltage Drain Current

IDSS

VDS = - 8 V, VGS = 0 V

- 1

VDS = - 8 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS ≤ - 5 V, VGS = - 4.5 V

- 8

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 3.0 A

0.040

0.048

Ω

VGS = - 2.5 V, ID = - 1.0 A

0.048

0.059

VGS = - 1.8 V, ID = - 1.0 A

0.060

0.073

VGS = - 1.5 V, ID = - 0.5 A

0.070

0.097

VGS = - 1.2 V, ID = - 0.5 A

0.110

0.190

Forward Transconductancea

gfs

VDS = - 4 V, ID = - 3.0 A

12

S

Dynamicb

Gate-Source Charge

Qg

VDS = - 4 V, VGS = - 4.5 V, ID = - 7.4 A

10.5

16

nC

Qgs

1.5

Gate-Drain Charge

Qgd

3.3

Gate Resistance

Rg

f = 1 MHz

80

400

800

Ω

Turn-On Delay Time

td(on)

VDD = - 4 V, RL = 0.7 Ω

ID ≅ - 6 A, VGEN = - 4.5 V, Rg = 1 Ω

90

180

ns

Rise Time

tr

170

340

Turn-Off Delay Time

td(off)

690

1380

Fall Time

tf

630

1260

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 2.0

A

Pulse Diode Forward Current

ISM

- 8

Body Diode Voltage

VSD

IS = - 2 A, VGS = 0 V

- 0.8

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C

30

60

ns

Body Diode Reverse Recovery Charge

Qrr

12

25

nC

Reverse Recovery Fall Time

ta

12

ns

Reverse Recovery Rise Time

tb

18

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