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BD136G-6-TM3-T Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte BD136G-6-TM3-T
Spiegazioni elettronici  PNP SILICON TRANSISTOR
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Produttore elettronici  UTC [Unisonic Technologies]
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BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R204-013.Ca
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
BD136
VCBO
-45
V
BD138
-60
BD140
-80
Collector-Emitter Voltage
BD136
VCEO
-45
V
BD138
-60
BD140
-80
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1.5
V
Collector Peak Current
ICM
-3
A
Base Current
IB
-0.5
A
Power Dissipation
TC≦25℃
TO-126
PD
12.5
W
TO-251
15
Junction Temperature
TJ
150
Storage Temperature
TSTG
-40 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-126
θJA
100
/W
TO-251
83
Junction to Case
TO-126
θJC
10
/W
TO-251
8.3
ELECTRICAL CHARACTERISTICS (TC=25℃,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Emitter
Sustaining Voltage
BD136
VCEO(SUS)
IC =-30mA, IB=0 (Note)
-45
V
BD138
-60
BD140
-80
Collector Cut-off Current
ICBO
VCB =-30 V, IE=0
-0.1
μA
VCB =-30 V, IE=0, TC = 125°C
-10
Emitter Cut- off Current
IEBO
VEB = -5 V, IC=0
-10
μA
DC Current Gain
hFE1
VCE=-2V, IC =-5mA,
25
hFE2
VCE=-2V, IC =-0.5A
25
hFE3
VCE=-2V, IC =-150mA
40
250
Collector-Emitter Saturation Voltage
VCE(SAT)
IC =-0.5A, IB = -0.05A (Note)
-0.5
V
Base-Emitter Voltage
VBE
IC =-0.5A, VCE =-2 V (Note)
-1
V
Note: Pulsed: Pulse duration
300μs, duty cycle 1.5 %
CLASSIFICATION OF hFE3
RANK
6
10
16
RANGE
40~100
63~160
100~250


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