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6N90 Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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6N90 Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 6N90 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-492.C ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous (TC=25°C) ID 6.2 A Pulsed (Note 2) IDM 24 A Avalanche Energy Single Pulsed (Note 3) EAS 650 mJ Repetitive (Note 2) EAR 16.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220 PD 167 W TO-220F/TO220F1 56 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 34mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220 θJC 0.75 °C/W TO-220F/TO220F1 2.25 °C/W |
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