N0301N datasheet(7/8 Pages) RENESAS

Il numero della parte	N0301N

Spiegazioni elettronici	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Produttore elettronici	RENESAS [Renesas Technology Corp]

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Data Sheet D20202EJ1V0DS

5

N0301N

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

0

10

20

30

40

50

60

70

80

90

100

0.1

1

10

100

10 V

VGS = 4.0 V

Pulsed

4.5 V

ID - Drain Current - A

10

100

1000

0.1

1

10

100

Ciss

Coss

Crss

VGS = 0 V

f = 1 MHz

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

1

10

100

0.1

1

10

100

td(on)

tf

tr

td(off)

VDD = 15 V

VGS = 10 V

RG = 10

Ω

ID - Drain Current - A

0.01

0.1

1

10

100

0.0

0.5

1.0

1.5

2.0

VGS = 0 V

Pulsed

VSD - Source to Drain Voltage - V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

0

1

2

3

4

5

6

7

8

9

10

01

23

4

5

678

9 10 11 12

ID = 4.5 A

VDD = 24 V

15 V

6 V

QG - Gate Charge - nC

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