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N0434N Scheda tecnica(PDF) 5 Page - Renesas Technology Corp |
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N0434N Scheda tecnica(HTML) 5 Page - Renesas Technology Corp |
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5 / 8 page  N0434N Chapter Title R07DS0556EJ0100 Rev.1.00 Page 5 of 6 Nov 07, 2011 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0 1 2 3 4 5 -50 0 50 100 150 VGS = 10 V ID = 50 A Pulsed Tch - Channel Temperature - °C 10 100 1000 10000 0.1 1 10 100 VGS = 0 V f = 1.0 MHz Crss Ciss Coss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS 1 10 100 1000 0.1 1 10 100 VDD = 20 V VGS = 10 V RG = 0 Ω td(on) tr td(off) tf ID - Drain Current - A 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 ID = 100 A VDD = 8 V 20 V 32 V QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 0.01 0.1 1 10 100 1000 0 0.4 0.8 1.2 1.6 Pulsed VGS = 10 V 0 V VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 0.1 1 10 100 VGS = 0 V di/dt = 100 A/µs IF - Diode Forward Current - A |
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