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BUZ346S2 Scheda tecnica(PDF) 8 Page - Siemens Semiconductor Group |
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BUZ346S2 Scheda tecnica(HTML) 8 Page - Siemens Semiconductor Group |
8 / 9 page Semiconductor Group 8 07/96 BUZ 346 S2 Not for new design Avalanche energy E AS = ƒ(Tj) parameter: ID = 58 A, VDD = 25 V R GS = 25 Ω, L = 21.4 µH 20 40 60 80 100 120 °C 160 T j 0 5 10 15 20 25 30 35 40 45 50 55 60 65 mJ 75 E AS Typ. gate charge VGS = ƒ(QGate) parameter: I D puls = 87 A 0 20 40 60 80 100 120 nC 160 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 54 56 58 60 62 64 66 68 V 71 V (BR)DSS |
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