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BUZ255 Scheda tecnica(PDF) 8 Page - Siemens Semiconductor Group |
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BUZ255 Scheda tecnica(HTML) 8 Page - Siemens Semiconductor Group |
8 / 9 page Semiconductor Group 8 07/96 BUZ 255 Not for new design Avalanche energy E AS = ƒ(Tj) parameter: ID = 13 A, VDD = 50 V R GS = 25 Ω, L = 1.89 mH 20 40 60 80 100 120 °C 160 T j 0 20 40 60 80 100 120 140 160 180 mJ 220 E AS Typ. gate charge VGS = ƒ(QGate) parameter: I D puls = 20 A 0 20 40 60 80 100 nC 140 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 180 185 190 195 200 205 210 215 220 225 230 V 240 V (BR)DSS |
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