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BUZ171 Scheda tecnica(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ171 Scheda tecnica(HTML) 1 Page - Siemens Semiconductor Group |
1 / 9 page Semiconductor Group 1 07/96 BUZ 171 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 171 -50 V -8 A 0.3 Ω TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 30 °C ID -8 A Pulsed drain current TC = 25 °C IDpuls -32 Avalanche energy, single pulse ID = -8 A, VDD = -25 V, RGS = 25 Ω L = 1.1 mH, Tj = 25 °C EAS 70 mJ Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 40 W Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 K/W Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 |
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