2SD1060 datasheet(3/4 Pages) SANYO

Il numero della parte	2SD1060

Spiegazioni elettronici	NPN Epitaxial Planar Silicon Transistor 50V / 5A Switching Applications

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Produttore elettronici	SANYO [Sanyo Semicon Device]

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2SD1060

No.686-3/4

VCE(sat) -- IC

Collector Current, IC -- A

10

0.1

23

5

2

3

5

23

5

2

1.0

10

5

3

2

5

3

2

1.0

5

3

2

0.1

0.01

Ta=80

°C

25°

C

--20°C

IC / IB=20

ITR08444

VBE(sat) -- IC

Collector Current, IC -- A

10

0.1

23

5

2

3

5

2

3

5

2

1.0

10

7

5

3

2

7

5

3

IC / IB=10

IC / IB=20

ITR08446

PC -- Ta

Ambient Temperature, Ta --

°C

PC -- Tc

Case Temperature, Tc --

°C

0

35

30

25

20

15

10

5

20

060

40

80

100

140

120

160

ITR08449

0

2.0

1.75

1.0

1.2

1.4

1.6

1.8

0.8

0.6

0.4

0.2

20

060

40

80

100

140

120

160

IT12873

No

heat

sink

A S O

Collector-to-Emitter Voltage, VCE -- V

1.0

5

7

2

3

5

7

2

3

10

2

0.1

10

1.0

25

3

57

7

2

5

37 100

ICP=9A

IC=5A

ITR08448

1ms to 100ms : Single pulse

hFE -- IC

Collector Current, IC -- A

VCE(sat) -- IC

Collector Current, IC -- A

Ta=80

°C

25°

C

--20°

C

IC / IB=10

10

0.1

23

5

2

3

5

23

5

2

1.0

10

5

3

2

5

3

2

1.0

5

3

2

0.1

0.01

ITR08442

100

7

1000

7

5

3

2

5

3

2

10

0.01

3

25

0.1

3

25

1.0

3

22

5

10

Ta=80°C

--20

°C

25

°C

VCE=2V

ITR08440

Codice articolo simile - 2SD1060

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Sanyo Semicon Device	2SD1060	113Kb / 4P	50V/5A Switching Applications
Unisonic Technologies	2SD1060	134Kb / 3P	NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Savantic, Inc.	2SD1060	140Kb / 4P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SD1060	133Kb / 4P	Silicon NPN Power Transistors
Unisonic Technologies	2SD1060	108Kb / 5P	NPN PLANAR SILICON TRANSISTOR

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2SD1060 Scheda tecnica(PDF) 3 Page - Sanyo Semicon Device

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