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BUZ111 Scheda tecnica(PDF) 8 Page - Siemens Semiconductor Group

Il numero della parte BUZ111
Spiegazioni elettronici  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
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Produttore elettronici  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ111 Scheda tecnica(HTML) 8 Page - Siemens Semiconductor Group

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Semiconductor Group
8
28/Jan/1998
BUZ111S
SPP80N05
Avalanche energy E
AS = ƒ(Tj)
parameter: ID = 80 A, VDD = 25 V
RGS = 25 Ω, L = 220 µH
20
40
60
80
100
120
140
°C
180
T
j
0
50
100
150
200
250
300
350
400
450
500
550
600
650
mJ
750
E
AS
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 80 A
0
20
40
60
80
100
120
140 nC 170
Q
Gate
0
2
4
6
8
10
12
V
16
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS = ƒ(Tj)
-60
-20
20
60
100
°C
180
T
j
49
51
53
55
57
59
61
V
65
V
(BR)DSS


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