BUZ102 datasheet(8/9 Pages) SIEMENS

Il numero della parte	BUZ102

Spiegazioni elettronici	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

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Produttore elettronici	SIEMENS [Siemens Semiconductor Group]

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8 / 9 page

Semiconductor Group

8

07/96

BUZ 102

Avalanche energy

E

AS = ƒ(Tj)

parameter:

ID = 42 A, VDD = 25 V

R

GS = 25 Ω, L = 102 µH

20

40

60

80

100

120

140

°C

180

T

j

0

20

40

60

80

100

120

140

160

mJ

190

E

AS

Typ. gate charge

VGS = ƒ(QGate)

parameter:

I

D puls = 63 A

0

10

20

30

40

50

60

nC

80

Q

Gate

0

2

4

6

8

10

12

V

16

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

-60

-20

20

60

100

°C

180

T

j

47

48

49

50

51

52

53

54

55

56

57

58

59

60

V

62

V

(BR)DSS

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BUZ102 Scheda tecnica(PDF) 8 Page - Siemens Semiconductor Group

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