BUZ101S datasheet(4/8 Pages) SIEMENS

Il numero della parte	BUZ101S

Spiegazioni elettronici	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

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Produttore elettronici	SIEMENS [Siemens Semiconductor Group]

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4 / 8 page

Semiconductor Group

4

04/Nov/1997

Preliminary data

BUZ 101 S

SPP22N05

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

TC = 25 °C

IS

-

22

A

Inverse diode direct current,pulsed

TC = 25 °C

ISM

-

88

Inverse diode forward voltage

VGS = 0 V, IF = 44 A

VSD

-

1.2

1.8

V

Reverse recovery time

VR = 30 V, IF=lS, diF/dt = 100 A/µs

trr

-

55

85

ns

Reverse recovery charge

VR = 30 V, IF=lS, diF/dt = 100 A/µs

Qrr

-

0.12

0.18

µC

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