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BUZ101S Scheda tecnica(PDF) 4 Page - Siemens Semiconductor Group |
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BUZ101S Scheda tecnica(HTML) 4 Page - Siemens Semiconductor Group |
4 / 8 page Semiconductor Group 4 04/Nov/1997 Preliminary data BUZ 101 S SPP22N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 22 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 88 Inverse diode forward voltage VGS = 0 V, IF = 44 A VSD - 1.2 1.8 V Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs trr - 55 85 ns Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Qrr - 0.12 0.18 µC |
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