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BUZ101L Scheda tecnica(PDF) 7 Page - Siemens Semiconductor Group |
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BUZ101L Scheda tecnica(HTML) 7 Page - Siemens Semiconductor Group |
7 / 9 page Semiconductor Group 7 07/96 BUZ 101L Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: V GS 0 10 20 30 40 A 60 I D 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 Ω 0.19 R DS (on) VGS [V] = a 2.0 VGS [V] = a 2.5 VGS [V] = a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 7.0 i i 8.0 j j 10.0 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: V GS = VDS, ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 °C 180 T j 2% typ 98% Typ. capacitances C = f (VDS) parameter: VGS = 0V, f = 1MHz 0 5 10 15 20 25 30 V 40 V DS 1 10 2 10 3 10 4 10 pF C C iss C oss C rss Forward characteristics of reverse diode I F = ƒ(VSD) parameter: T j, tp = 80 µs 0 10 1 10 2 10 3 10 A I F 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 V SD T j = 25 °C typ T j = 25 °C (98%) T j = 175 °C typ T j = 175 °C (98%) |
Codice articolo simile - BUZ101L |
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