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BUZ100S Scheda tecnica(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ100S Scheda tecnica(HTML) 1 Page - Siemens Semiconductor Group |
1 / 8 page Semiconductor Group 1 30/Jan/1998 BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100 S 55 V 77 A 0.015 Ω TO-220 AB Q67040-S4001-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID 55 77 A Pulsed drain current TC = 25 °C IDpuls 308 Avalanche energy, single pulse ID = 77 A, VDD = 25 V, RGS = 25 Ω L = 128 µH, Tj = 25 °C EAS 380 mJ Avalanche current,limited by Tjmax IAR 77 A Avalanche energy,periodic limited by Tjmax EAR 17 mJ Reverse diode dv/dt IS = 77 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C dv/dt 6 kV/µs Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 170 W |
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