BUZ100S datasheet(1/8 Pages) SIEMENS

Il numero della parte	BUZ100S

Spiegazioni elettronici	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

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Produttore elettronici	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

1

30/Jan/1998

BUZ 100 S

SPP77N05

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• dv/dt rated

• 175°C operating temperature

• also in SMD available

Pin 1

Pin 2

Pin 3

G

D

S

Type

VDS

ID

RDS(on)

Package

Ordering Code

BUZ 100 S

55 V

77 A

0.015

Ω

TO-220 AB

Q67040-S4001-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

55

77

A

Pulsed drain current

TC = 25 °C

IDpuls

308

Avalanche energy, single pulse

ID = 77 A, VDD = 25 V, RGS = 25 Ω

L

= 128 µH, Tj = 25 °C

EAS

380

mJ

Avalanche current,limited by Tjmax

IAR

77

A

Avalanche energy,periodic limited by Tjmax

EAR

17

mJ

Reverse diode dv/dt

IS = 77 A, VDS = 40 V, diF/dt = 200 A/µs

Tjmax = 175 °C

dv/dt

6

kV/µs

Gate source voltage

VGS

± 20

V

Power dissipation

TC = 25 °C

Ptot

170

W

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