Preliminary BTS 725 L1

Parameter

Symbol

Values

Unit

Semiconductor Group

3

Load current (Short-circuit current, see page 5)

self-limited

A

each channel loaded with

Ω,

60

V

Operating temperature range

Storage temperature range

-40 ...+150

-55 ...+150

°C

(all channels active)

3.7

1.9

W

Electrostatic discharge capability (ESD)

(Human Body Model)

1.0

kV

Input voltage (DC)

-10 ... +16

V

Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagram page 8

±2.0

±5.0

mA

Thermal resistance

each channel:

12

K/W

one channel active:

all channels active:

41

34

2

)

150

Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input

protection is integrated.

3)

4)

5

)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

µm thick) copper area for Vbb

connection. PCB is vertical without blown air. See page 14

6

)

Soldering point: upper side of solder edge of device pin 15. See page 14

Electrical Characteristics

Symbol

Values

Unit

min

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT)

each channel,

two parallel channels,

--

50

100

25

60

120

30

m

Ω