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BTS410H2 Scheda tecnica(PDF) 1 Page - Siemens Semiconductor Group |
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BTS410H2 Scheda tecnica(HTML) 1 Page - Siemens Semiconductor Group |
1 / 13 page PROFET® BTS 410 H2 Semiconductor Group 1 03.97 Smart Highside Power Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in OFF-state • CMOS compatible input • Loss of ground and loss of V bb protection • Electrostatic discharge (ESD) protection Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • Most suitable for inductive loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. + Vbb IN ST Signal GND ESD PROFET ® OUT GND Logic Voltage sensor Voltage source Open load detection Short circuit detection Charge pump Level shifter Temperature sensor Rectifier Limit for unclamped ind. loads Gate protection Current limit 2 4 1 3 5 Load GND Load V Logic Overvoltage protection 1 ) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load. Product Summary Overvoltage protection Vbb(AZ) 65 V Operating voltage Vbb(on) 4.7 ... 42 V On-state resistance RON 220 m Ω Load current (ISO) IL(ISO) 1.8 A Current limitation IL(SCr) 1.5 A TO-220AB/5 5 Standard 1 5 Straight leads 1 5 SMD |
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