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2SC1815 Scheda tecnica(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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2SC1815 Scheda tecnica(HTML) 1 Page - Tiger Electronic Co.,Ltd |
1 / 3 page 2SC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The 2SC1815 is designed for use in driver stage of AF amplifier general purpose amplification. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................... -55~+150 °C Junction Temperature ..................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25 °C) ................................................................................ 400 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ......................................................................................... 50 V VCEO Collector to Emitter Voltage ...................................................................................... 50 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current ........................................................................................................ 150 mA Characteristics (Ta=25 °C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 50 - - V IC=100uA, IE=0 BVCEO 50 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=10uA, IC=0 ICBO - - 100 nA VCB=60V, IE=0 IEBO - - 100 nA VEB=5V, IC=0 VCE(sat) - - 250 mV IC=100mA, IB=10mA VBE(sat) - - 1 V IC=100mA, IB=10mA hFE1 120 - 700 VCE=6V, IC=2mA hFE2 25 - - VCE=6V, IC=150mA fT 80 - - MHz VCE=10V, IC=1mA, f=100MHz Cob - - 3.5 pF VCB=10V, f=1MHz, IE=0 Classification of hFE1 Rank Y GR BL Range 120-240 200-400 350-700 TIGER ELECTRONIC CO.,LTD TIGER ELECTRONIC CO.,LTD |
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