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1N1190 Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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1N1190 Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 93492 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 25-May-09 1 Power Silicon Rectifier Diodes, 35 A/40 A/60 A 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC Note (1) JEDEC registered values ELECTRICAL SPECIFICATIONS Notes (1) JEDEC registered values (2) For 1N1183 Series and 1N3765 Series TC = - 65 °C to 190 °C • Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186AR, 1N2135AR PRODUCT SUMMARY IF(AV) 35 A/40 A/60 A DO-203AB (DO-5) MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS IF(AV) 35 (1) 35 (1) 40 (1) 60 (1) A TC 140 (1) 140 (1) 150 (1) 140 (1) °C IFSM 50 Hz 480 380 765 860 A 60 Hz 500 (1) 400 (1) 800 (1) 900 (1) I2t 50 Hz 1140 730 2900 3700 A2s 60 Hz 1040 670 2650 3400 I2 √t 16 100 10 300 41 000 52 500 A2 √s VRRM Range 50 to 600 (1) 700 to 1000 (1) 50 to 600 (1) 50 to 600 (1) V VOLTAGE RATINGS TYPE NUMBER VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE (TJ = - 65 °C TO 200 °C (2)) V VRM, MAXIMUM DIRECT REVERSE VOLTAGE (TJ = - 65 °C TO 200 °C (2)) V 1N1183 1N1183A 1N2128A 50 (1) 50 (1) 1N1184 1N1184A 1N2129A 100 (1) 100 (1) 1N1185 1N1185A 1N2130A 150 (1) 150 (1) 1N1186 1N1186A 1N2131A 200 (1) 200 (1) 1N1187 1N1187A 1N2133A 300 (1) 300 (1) 1N1188 1N1188A 1N2135A 400 (1) 400 (1) 1N1189 1N1189A 1N2137A 500 (1) 500 (1) 1N1190 1N1190A 1N2138A 600 (1) 600 (1) 1N3765 700 (1) 700 (1) 1N3766 800 (1) 800 (1) 1N3767 900 (1) 900 (1) 1N3768 1000 (1) 1000 (1) |
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