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BCW68H Scheda tecnica(PDF) 3 Page - Siemens Semiconductor Group |
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BCW68H Scheda tecnica(HTML) 3 Page - Siemens Semiconductor Group |
3 / 6 page Semiconductor Group 3 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. V Collector-emitter breakdown voltage IC = 10 mA BCW 67 BCW 68 V(BR)CE0 32 45 – – – – nA nA µA µA Collector cutoff current VCB = 32 V BCW 67 VCB = 45 V BCW 68 VCB = 32 V, TA = 150 ˚C BCW 67 VCB = 45 V, TA = 150 ˚C BCW 68 ICB0 – – – – – – – – 20 20 20 20 Unit Values Parameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10 µA BCW 67 BCW 68 V(BR)CB0 45 60 – – – – Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 5–– – DC current gain1) IC = 100 µA, VCE = 10 V BCW 67 A, BCW 68 F BCW 67 B, BCW 68 G BCW 67 C, BCW 68 H IC = 10 mA, VCE = 1 V BCW 67 A, BCW 68 F BCW 67 B, BCW 68 G BCW 67 C, BCW 68 H IC = 100 mA, VCE = 1 V BCW 67 A, BCW 68 F BCW 67 B, BCW 68 G BCW 67 C, BCW 68 H IC = 500 mA, VCE = 2 V BCW 67 A, BCW 68 F BCW 67 B, BCW 68 G BCW 67 C, BCW 68 H hFE 35 50 80 75 120 180 100 160 250 35 60 100 – – – – – – 160 250 350 – – – – – – – – – 250 400 630 – – – nA Emitter-base cutoff current, VEB = 4 V IEB0 ––20 1) Pulse test: t ≤ 300 µs, D = 2 %. BCW 67 BCW 68 |
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