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BCW68H Scheda tecnica(PDF) 3 Page - Siemens Semiconductor Group

Il numero della parte BCW68H
Spiegazioni elettronici  PNP Silicon AF Transistors (For general AF applications High current gain)
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Produttore elettronici  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BCW68H Scheda tecnica(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
V
Collector-emitter breakdown voltage
IC = 10 mA
BCW 67
BCW 68
V(BR)CE0
32
45
nA
nA
µA
µA
Collector cutoff current
VCB = 32 V
BCW 67
VCB = 45 V
BCW 68
VCB = 32 V, TA = 150 ˚C
BCW 67
VCB = 45 V, TA = 150 ˚C
BCW 68
ICB0
20
20
20
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 10
µA
BCW 67
BCW 68
V(BR)CB0
45
60
Emitter-base breakdown voltage, IE = 10
µA
V(BR)EB0
5––
DC current gain1)
IC = 100
µA, VCE = 10 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 10 mA, VCE = 1 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 100 mA, VCE = 1 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
IC = 500 mA, VCE = 2 V
BCW 67 A, BCW 68 F
BCW 67 B, BCW 68 G
BCW 67 C, BCW 68 H
hFE
35
50
80
75
120
180
100
160
250
35
60
100
160
250
350
250
400
630
nA
Emitter-base cutoff current, VEB = 4 V
IEB0
––20
1)
Pulse test: t
300 µs, D = 2 %.
BCW 67
BCW 68


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