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BU100 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU100 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU100 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=8A ;IB=2.5A 3.3 V VBE(sat) Base-emitter saturation voltage IC=8A ;IB=2.5A 2.2 V ICBO Collector cut-off current VCB=120V; IE=0 10 μA IEBO Emitter cut-off current VEB=7V; IC=0 10 μA hFE DC current gain IC=2A ; VCE=2V 40 90 fT Transition frequency IC=0.5A ; VCE=10V;f=1MHz 0.1 MHz |
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