BCR108S datasheet(3/4 Pages) SIEMENS

Il numero della parte	BCR108S

Spiegazioni elettronici	NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

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Produttore elettronici	SIEMENS [Siemens Semiconductor Group]

Homepage	http://www.siemens.com/

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3 / 4 page

Semiconductor Group

3

Nov-26-1996

BCR 108S

DC Current Gain

hFE = f (IC)

VCE = 5V (common emitter configuration)

10

-1

10

0

10

1

mA

I

C

0

10

1

10

2

10

3

10

-

h

FE

Collector-Emitter Saturation Voltage

VCEsat = f(IC), hFE = 20

0.0

0.1

0.2

0.3

V

0.5

V

CEsat

0

10

1

10

2

10

mA

I

C

Input on Voltage

Vi(on) = f(IC)

VCE = 0.3V (common emitter configuration)

10

-1

10

0

10

1

V

i(on)

-1

10

0

10

1

10

2

10

mA

I

C

Input off voltage

Vi(off) = f(IC)

VCE = 5V (common emitter configuration)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

V

1.0

V

i(off)

-3

10

-2

10

-1

10

0

10

1

10

mA

I

C

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