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SIZ790DT Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte SIZ790DT
Spiegazioni elettronici  Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Vishay Siliconix
SiZ790DT
New Product
Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
SkyFET® Monolithic TrenchFET®
Power MOSFETs and Schottky Diode
100 % Rg Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
System Power
- Notebook
- Server
POL
Synchronous Buck
Converter
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A) Qg (Typ.)
Channel-1
30
0.0093 at VGS = 10 V
16a
7.7 nC
0.0130 at VGS = 4.5 V
16a
Channel-2
30
0.0047 at VGS = 10 V
35a
17 nC
0.0059 at VGS = 4.5 V
35a
Ordering Information: SiZ790DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
G2
S2
S2
D1
D1
1
6
5
4
2
3
3.73 mm
6.00 mm
PowerPAIR® 6 x 3.7
D1
S1/D2
Pin 1
GHS
GLS
GND
GND
VIN
VIN
1
6
5
4
2
3
VIN
VSW
VIN/D1
GND/S2
N-Channel 2
MOSFET
GHS/
G1
VSW/
S1/D2
GLS/
G2
Schottky
Diode
N-Channel 1
MOSFET
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
16a
35a
A
TC = 70 °C
16a
35a
TA = 25 °C
12.9b, c
23.4b, c
TA = 70 °C
10.3b, c
18.7b, c
Pulsed Drain Current (t = 300 µs)
IDM
70
100
Continuous Source Drain Diode Current
TC = 25 °C
IS
16a
35a
TA = 25 °C
3.2b, c
3.8b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
16
30
Single Pulse Avalanche Energy
EAS
13
45
mJ
Maximum Power Dissipation
TC = 25 °C
PD
27
48
W
TC = 70 °C
17
31
TA = 25 °C
3.9b, c
4.6b, c
TA = 70 °C
2.5b, c
3b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Channel-2
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, f
t
≤ 10 s
RthJA
24
32
20
27
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
3.5
4.6
2
2.6


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