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BAW78B Scheda tecnica(PDF) 2 Page - Siemens Semiconductor Group

Il numero della parte BAW78B
Spiegazioni elettronici  Silicon Switching Diodes (Switching applications High breakdown voltage)
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Produttore elettronici  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BAW78B Scheda tecnica(HTML) 2 Page - Siemens Semiconductor Group

  BAW78B Datasheet HTML 1Page - Siemens Semiconductor Group BAW78B Datasheet HTML 2Page - Siemens Semiconductor Group BAW78B Datasheet HTML 3Page - Siemens Semiconductor Group  
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BAW 78 A
… BAW 78 D
Semiconductor Group
2
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Test circuit for reverse recovery time
Pulse generator:
tp = 5 µs, D = 0.05
Oscillograph:
R = 50
tr = 0.6 ns, Rj = 50
tr = 0.35 ns
C
1pF
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Breakdown voltage
I(BR) = 100
µA
BAW 78 A
BAW 78 B
BAW 78 C
BAW 78 D
V(BR)
50
100
200
400
µA
Reverse current
VR = VRmax
VR = VRmax, TA = 150 ˚C
IR
1
50
AC characteristics
µs
Reverse recovery time
IF = 200 mA, IR = 200 mA,
RL = 100
measured at IR = 20 mA
trr
–1–
V
Forward voltage1)
IF = 1 A
IF = 2 A
VF
1.6
2
pF
Diode capacitance
VR = 0, f = 1 MHz
CD
–10
1)
Pulse test: tp
300 µs, D = 2 %.


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